In-situ Self-optimization of Quantum Dot Emission for Lasers by Machine-Learning Assisted Epitaxy

Traditional methods for optimizing light source emissions rely on a time-consuming trial-and-error approach. While in-situ optimization of light source gain media emission during growth is ideal, it has yet to be realized. In this work, we integrate in-situ reflection high-energy electron diffraction (RHEED) with machine learning (ML) to correlate the surface reconstruction with the photoluminescence (PL) of InAs/GaAs quantum dots (QDs), which serve as the active region of lasers. A lightweight ResNet-GLAM model is employed for the real-time processing of RHEED data as input, enabling effective identification of optical performance. This approach guides the dynamic optimization of growth parameters, allowing real-time feedback control to adjust the QDs emission for lasers. We successfully optimized InAs QDs on GaAs substrates, with a 3.2-fold increase in PL intensity and a reduction in full width at half maximum (FWHM) from 36.69 meV to 28.17 meV under initially suboptimal growth conditions. Our automated, in-situ self-optimized lasers with 5-layer InAs QDs achieved electrically pumped continuous-wave operation at 1240 nm with a low threshold current of 150 A/cm2 at room temperature, an excellent performance comparable to samples grown through traditional manual multi-parameter optimization methods. These results mark a significant step toward intelligent, low-cost, and reproductive light emitters production.

Autonomous, Self-driving Multi-Step Growth of Semiconductor Heterostructures Guided by Machine Learning

The semiconductor industry has prioritized automating repetitive tasks by closed-loop, autonomous experimentation which enables accelerated optimization of complex multi-step processes. The emergence of machine learning (ML) has ushered in automated process with minimal human intervention. In this work, we develop SemiEpi, a self-driving automation platform capable of executing molecular beam epitaxy (MBE) growth with multi-steps, continuous in-situ monitoring, and on-the-fly feedback control. By integrating standard hardware, homemade software, curve fitting, and multiple ML models, SemiEpi operates autonomously, eliminating the need for extensive expertise in MBE processes to achieve optimal outcomes. The platform actively learns from previous experimental results, identifying favorable conditions and proposing new experiments to achieve the desired results. We standardize and optimize growth for InAs/GaAs quantum dots (QDs) heterostructures to showcase the power of ML-guided multi-step growth. A temperature calibration was implemented to get the initial growth condition, and fine control of the process was executed using ML. Leveraging RHEED movies acquired during the growth, SemiEpi successfully identified and optimized a novel route for multi-step heterostructure growth. This work demonstrates the capabilities of closed-loop, ML-guided systems in addressing challenges in multi-step growth for any device. Our method is critical to achieve repeatable materials growth using commercially scalable tools. Our strategy facilitates the development of a hardware-independent process and enhancing process repeatability and stability, even without exhaustive knowledge of growth parameters.

Unsupervised, Self-driving Multi-Step Growth of InAs/GaAs Quantum Dots Heterostructures Guided by Machine Learning

The semiconductor industry has prioritized automating repetitive tasks by closed-loop, autonomous experimentation which enables accelerated optimization of complex multi-step processes. The emergence of machine learning (ML) has ushered in automated process with minimal human intervention. In this work, we develop SemiEpi, a self-driving automation platform capable of executing molecular beam epitaxy (MBE) growth with multi-steps, continuous in-situ monitoring, and on-the-fly feedback control. By integrating standard hardware, homemade software, curve fitting, and multiple ML models, SemiEpi operates autonomously, eliminating the need for extensive expertise in MBE processes to achieve optimal outcomes. The platform actively learns from previous experimental results, identifying favorable conditions and proposing new experiments to achieve the desired results. We standardize and optimize growth for InAs/GaAs quantum dots (QDs) heterostructures to showcase the power of ML-guided multi-step growth. A temperature calibration was implemented to get the initial growth condition, and fine control of the process was executed using ML. Leveraging RHEED movies acquired during the growth, SemiEpi successfully identified and optimized a novel route for multi-step heterostructure growth. This work demonstrates the capabilities of closed-loop, ML-guided systems in addressing challenges in multi-step growth for any device. Our method is critical to achieve repeatable materials growth using commercially scalable tools. Our strategy facilitates the development of a hardware-independent process and enhancing process repeatability and stability, even without exhaustive knowledge of growth parameters.

Universal Deoxidation of Semiconductor Substrates Assisted by Machine-Learning and Real-Time-Feedback-Control

Thin film deposition is an essential step in the semiconductor process. During preparation or loading, the substrate is exposed to the air unavoidably, which has motivated studies of the process control to remove the surface oxide before thin film deposition. Optimizing the deoxidation process in molecular beam epitaxy (MBE) for a random substrate is a multidimensional challenge and sometimes controversial. Due to variations in semiconductor materials and growth processes, the determination of substrate deoxidation temperature is highly dependent on the grower's expertise; the same substrate may yield inconsistent results when evaluated by different growers. Here, we employ a machine learning (ML) hybrid convolution and vision transformer (CNN-ViT) model. This model utilizes reflection high-energy electron diffraction (RHEED) video as input to determine the deoxidation status of the substrate as output, enabling automated substrate deoxidation under a controlled architecture. This also extends to the successful application of deoxidation processes on other substrates. Furthermore, we showcase the potential of models trained on data from a single MBE equipment to achieve high-accuracy deployment on other equipment. In contrast to traditional methods, our approach holds exceptional practical value. It standardizes deoxidation temperatures across various equipment and substrate materials, advancing the standardization research process in semiconductor preparation, a significant milestone in thin film growth technology. The concepts and methods demonstrated in this work are anticipated to revolutionize semiconductor manufacturing in optoelectronics and microelectronics industries by applying them to diverse material growth processes.

Machine-Learning-Assisted and Real-Time-Feedback-Controlled Growth of InAs/GaAs Quantum Dots

Self-assembled InAs/GaAs quantum dots (QDs) have properties highly valuable for developing various optoelectronic devices such as QD lasers and single photon sources. The applications strongly rely on the density and quality of these dots, which has motivated studies of the growth process control to realize high-quality epi-wafers and devices. Establishing the process parameters in molecular beam epitaxy (MBE) for a specific density of QDs is a multidimensional optimization challenge, usually addressed through time-consuming and iterative trial-and-error. Here, we report a real-time feedback control method to realize the growth of QDs with arbitrary and precise density, which is fully automated and intelligent. We developed a machine learning (ML) model named 3D ResNet, specially designed for training RHEED videos instead of static images and providing real-time feedback on surface morphologies for process control. As a result, we demonstrated that ML from previous growth could predict the post-growth density of QDs, by successfully tuning the QD densities in near-real time from 1.5E10 cm-2 down to 3.8E8 cm-2 or up to 1.4E11 cm-2. Compared to traditional methods, our approach, with in-situ tuning capabilities and excellent reliability, can dramatically expedite the material optimization process and improve the reproducibility of MBE growth, constituting significant progress for thin film growth techniques. The concepts and methodologies proved feasible in this work are promising to be applied to a variety of material growth processes, which will revolutionize semiconductor manufacturing for microelectronic and optoelectronic industries.