Multi-level, Forming Free, Bulk Switching Trilayer RRAM for Neuromorphic Computing at the Edge

Resistive memory-based reconfigurable systems constructed by CMOS-RRAM integration hold great promise for low energy and high throughput neuromorphic computing. However, most RRAM technologies relying on filamentary switching suffer from variations and noise leading to computational accuracy loss, increased energy consumption, and overhead by expensive program and verify schemes. Low ON-state resistance of filamentary RRAM devices further increases the energy consumption due to high-current read and write operations, and limits the array size and parallel multiply & accumulate operations. High-forming voltages needed for filamentary RRAM are not compatible with advanced CMOS technology nodes. To address all these challenges, we developed a forming-free and bulk switching RRAM technology based on a trilayer metal-oxide stack. We systematically engineered a trilayer metal-oxide RRAM stack and investigated the switching characteristics of RRAM devices with varying thicknesses and oxygen vacancy distributions across the trilayer to achieve reliable bulk switching without any filament formation. We demonstrated bulk switching operation at megaohm regime with high current nonlinearity and programmed up to 100 levels without compliance current. We developed a neuromorphic compute-in-memory platform based on trilayer bulk RRAM crossbars by combining energy-efficient switched-capacitor voltage sensing circuits with differential encoding of weights to experimentally demonstrate high-accuracy matrix-vector multiplication. We showcased the computational capability of bulk RRAM crossbars by implementing a spiking neural network model for an autonomous navigation/racing task. Our work addresses challenges posed by existing RRAM technologies and paves the way for neuromorphic computing at the edge under strict size, weight, and power constraints.

Quantitative Evaluations on Saliency Methods: An Experimental Study

It has been long debated that eXplainable AI (XAI) is an important topic, but it lacks rigorous definition and fair metrics. In this paper, we briefly summarize the status quo of the metrics, along with an exhaustive experimental study based on them, including faithfulness, localization, false-positives, sensitivity check, and stability. With the experimental results, we conclude that among all the methods we compare, no single explanation method dominates others in all metrics. Nonetheless, Gradient-weighted Class Activation Mapping (Grad-CAM) and Randomly Input Sampling for Explanation (RISE) perform fairly well in most of the metrics. Utilizing a set of filtered metrics, we further present a case study to diagnose the classification bases for models. While providing a comprehensive experimental study of metrics, we also examine measuring factors that are missed in current metrics and hope this valuable work could serve as a guide for future research.