Deeploy: Enabling Energy-Efficient Deployment of Small Language Models On Heterogeneous Microcontrollers

With the rise of Embodied Foundation Models (EFMs), most notably Small Language Models (SLMs), adapting Transformers for edge applications has become a very active field of research. However, achieving end-to-end deployment of SLMs on microcontroller (MCU)-class chips without high-bandwidth off-chip main memory access is still an open challenge. In this paper, we demonstrate high-efficiency end-to-end SLM deployment on a multicore RISC-V (RV32) MCU augmented with ML instruction extensions and a hardware neural processing unit (NPU). To automate the exploration of the constrained, multi-dimensional memory vs. computation tradeoffs involved in aggressive SLM deployment on heterogeneous (multicore+NPU) resources, we introduce Deeploy, a novel Deep Neural Network (DNN) compiler, which generates highly-optimized C code requiring minimal runtime support. We demonstrate that Deeploy generates end-to-end code for executing SLMs, fully exploiting the RV32 cores' instruction extensions and the NPU: We achieve leading-edge energy and throughput of \SI{490}{\micro\joule \per Token}, at \SI{340}{Token \per \second} for an SLM trained on the TinyStories dataset, running for the first time on an MCU-class device without external memory.

Toward Attention-based TinyML: A Heterogeneous Accelerated Architecture and Automated Deployment Flow

One of the challenges for Tiny Machine Learning (tinyML) is keeping up with the evolution of Machine Learning models from Convolutional Neural Networks to Transformers. We address this by leveraging a heterogeneous architectural template coupling RISC-V processors with hardwired accelerators supported by an automated deployment flow. We demonstrate an Attention-based model in a tinyML power envelope with an octa-core cluster coupled with an accelerator for quantized Attention. Our deployment flow enables an end-to-end 8-bit MobileBERT, achieving leading-edge energy efficiency and throughput of 2960 GOp/J and 154 GOp/s at 32.5 Inf/s consuming 52.0 mW (0.65 V, 22 nm FD-SOI technology).