Abstract:This paper proposes a fast system technology co-optimization (STCO) framework that optimizes power, performance, and area (PPA) for next-generation IC design, addressing the challenges and opportunities presented by novel materials and device architectures. We focus on accelerating the technology level of STCO using AI techniques, by employing graph neural network (GNN)-based approaches for both TCAD simulation and cell library characterization, which are interconnected through a unified compact model, collectively achieving over a 100X speedup over traditional methods. These advancements enable comprehensive STCO iterations with runtime speedups ranging from 1.9X to 14.1X and supports both emerging and traditional technologies.
Abstract:An innovative methodology that leverages artificial intelligence (AI) and graph representation for semiconductor device encoding in TCAD device simulation is proposed. A graph-based universal encoding scheme is presented that not only considers material-level and device-level embeddings, but also introduces a novel spatial relationship embedding inspired by interpolation operations typically used in finite element meshing. Universal physical laws from device simulations are leveraged for comprehensive data-driven modeling, which encompasses surrogate Poisson emulation and current-voltage (IV) prediction based on drift-diffusion model. Both are achieved using a novel graph attention network, referred to as RelGAT. Comprehensive technical details based on the device simulator Sentaurus TCAD are presented, empowering researchers to adopt the proposed AI-driven Electronic Design Automation (EDA) solution at the device level.