Ga$_2$O$_3$ TCAD Mobility Parameter Calibration using Simulation Augmented Machine Learning with Physics Informed Neural Network

In this paper, we demonstrate the possibility of performing automatic Technology Computer-Aided-Design (TCAD) parameter calibration using machine learning, verified with experimental data. The machine only needs to be trained by TCAD data. Schottky Barrier Diode (SBD) fabricated with emerging ultra-wide-bandgap material, Gallium Oxide (Ga$_2$O$_3$), is measured and its current-voltage (IV) is used for Ga$_2$O$_3$ Philips Unified Mobility (PhuMob) model parameters, effective anode workfunction, and ambient temperature extraction (7 parameters). A machine comprised of an autoencoder (AE) and a neural network (NN) (AE-NN) is used. Ga$_2$O$_3$ PhuMob parameters are extracted from the noisy experimental curves. TCAD simulation with the extracted parameters shows that the quality of the parameters is as good as an expert's calibration at the pre-turned-on regime but not in the on-state regime. By using a simple physics-informed neural network (PINN) (AE-PINN), the machine performs as well as the human expert in all regimes.

Stuck-at Faults in ReRAM Neuromorphic Circuit Array and their Correction through Machine Learning

In this paper, we study the inference accuracy of the Resistive Random Access Memory (ReRAM) neuromorphic circuit due to stuck-at faults (stuck-on, stuck-off, and stuck at a certain resistive value). A simulation framework using Python is used to perform supervised machine learning (neural network with 3 hidden layers, 1 input layer, and 1 output layer) of handwritten digits and construct a corresponding fully analog neuromorphic circuit (4 synaptic arrays) simulated by Spectre. A generic 45nm Process Development Kit (PDK) was used. We study the difference in the inference accuracy degradation due to stuck-on and stuck-off defects. Various defect patterns are studied including circular, ring, row, column, and circular-complement defects. It is found that stuck-on and stuck-off defects have a similar effect on inference accuracy. However, it is also found that if there is a spatial defect variation across the columns, the inference accuracy may be degraded significantly. We also propose a machine learning (ML) strategy to recover the inference accuracy degradation due to stuck-at faults. The inference accuracy is improved from 48% to 85% in a defective neuromorphic circuit.

Device Image-IV Mapping using Variational Autoencoder for Inverse Design and Forward Prediction

This paper demonstrates the learning of the underlying device physics by mapping device structure images to their corresponding Current-Voltage (IV) characteristics using a novel framework based on variational autoencoders (VAE). Since VAE is used, domain expertise is not required and the framework can be quickly deployed on any new device and measurement. This is expected to be useful in the compact modeling of novel devices when only device cross-sectional images and electrical characteristics are available (e.g. novel emerging memory). Technology Computer-Aided Design (TCAD) generated and hand-drawn Metal-Oxide-Semiconductor (MOS) device images and noisy drain-current-gate-voltage curves (IDVG) are used for the demonstration. The framework is formed by stacking two VAEs (one for image manifold learning and one for IDVG manifold learning) which communicate with each other through the latent variables. Five independent variables with different strengths are used. It is shown that it can perform inverse design (generate a design structure for a given IDVG) and forward prediction (predict IDVG for a given structure image, which can be used for compact modeling if the image is treated as device parameters) successfully. Since manifold learning is used, the machine is shown to be robust against noise in the inputs (i.e. using hand-drawn images and noisy IDVG curves) and not confused by weak and irrelevant independent variables.